Accession Number:

ADD012185

Title:

Self Aligned Notch for InP Planar Transferred Electron Oscillator.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Binari,Steven C.

Report Date:

1986-01-13

Pagination or Media Count:

14.0

Abstract:

A method of fabricating a notched indium phosphide planar transferred electron oscillator device which automatically aligns the high-resistivity notch position immediately adjacent to the cathode contact by slant evaporation of a metal coating over the edge of a masking layer followed by ion implantation. Patent Applications

Descriptors:

• *ION IMPLANTATION
• *OSCILLATORS
• *MASKING
• *PATENT APPLICATIONS
• COATINGS
• METALS
• ELECTRON TRANSFER
• PLANAR STRUCTURES
• LAYERS
• EVAPORATION
• SLANT RANGE

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE