Accession Number:

ADD012184

Title:

Preparation of Refractory Tunnel Barriers of Sputtered Boron Nitride.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1985-12-23

Pagination or Media Count:

10.0

Abstract:

The present invention relates to Josephson Junctions. More specifically the present invention relates to high quality artificial tunnel barriers found in a Josephson junction. A Josephson Junction is a weak connection between two superconducting layers through which the Josephson effect is realized. The Josephson effect Is where the passage of paired electrons Cooper pairs through a weak connection forms a current supercurrent in addition to the usual current that results from the passage or tunneling of single electrons. Objects of the present invention are to provide a tunnel barrier that has a sharp even interface with the superconducting metal to provide a tunnel barrier that is amorphous and to provide a tunnel barrier that does not breakdown under high temperature conditions. These, and other objects of the present invention ar achieved with a Josephson junction comprising a first superconducting layer a second superconducting layer and a tunnel barrier of boron nitride located between the first and second superconducting layers and in contact therewith.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE