Accession Number:

ADD012113

Title:

Method for Vacuum Baking Indium In-Situ.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

• Adamski,Joseph A.

Report Date:

1985-12-17

Pagination or Media Count:

6.0

Abstract:

This invention pertains to a method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vaccuum in an open ended quartz ampoule to a temperature in excess of 850 C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.

Descriptors:

• *PATENTS
• *SEMICONDUCTORS
• *INDIUM PHOSPHIDES
• *INDIUM
• *HEAT TREATMENT
• VACUUM
• AMPULES
• SEALED SYSTEMS
• POLYCRYSTALLINE
• SINGLE CRYSTALS
• PURITY
• CRYSTAL GROWTH

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE