MBE (Molecular Beam Epitaxy) Growth Technique for Matching Superlattices Grown on GaAs Substrates.
DEPARTMENT OF THE ARMY WASHINGTON DC
Pagination or Media Count:
Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and in1-xGaxAs-GaSb1-yAsy superlattices grown on GaAs substrates by means of a MBE molecular beam epitaxy growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice. Author
- Solid State Physics