Low Resistance OHMIC Contact.
DEPARTMENT OF THE NAVY WASHINGTON DC
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This document describes a method for obtaining a very low resistance ohmic contact on p-type Indium Phosphide by light-assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, has been used for producting patterned, small area contacts on device structures and is compatible with established n-type ohmic contacting procedures.
- Solid State Physics