Accession Number:

ADD010879

Title:

Integrated Optical Grating Device by Thermal SiO2 Growth on Si,

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1984-01-17

Pagination or Media Count:

5.0

Abstract:

Disclosed is a method of producing an integrated optical grating device having extremely low scattering losses. The method employs a highly polished and prepared silicon chip for receiving a grating pattern or any other surface relief feature on the silicon wafer surface for its predetermined use. The pattern after it is generated is etched to a predetermined period, for example, when the pattern is for a waveguide device. An SiO2 growth layer is thermally grown to a thickness of about 4 to 8 micrometers to replicate the generated pattern in the SiO2 growth layer. This method yields a waveguide or similar optical grating device having undulations of extremely low values as determined by SEM photographs of this device. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE