A Low Temperature Chemical Vapor Deposition System for Depositing Silicon Dioxide.
DEPARTMENT OF THE NAVY WASHINGTON DC
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A system for the deposition of silicon dioxide SiO2 on a substrate comprises a separate radio frequency RF discharge chamber for exciting the oxygen. Power from an RF generator is inductively coupled to the discharge chamber via an inductance-capacitance L-C matching network, and at suitably low pressure an oxygen plasma is generated. A conducting surface is intentionally included in the discharge chamber to provide a means for the electrons and ions formed by the plasma to recombine before leaving the discharge chamber. The excited oxygen gas is passed from the discharge chamber through tubing of preselected length into a deposition chamber which contains a platform on which the substrate lies. The distance between the discharge chamber and the deposition zone is such that most energetic species of excited oxygen cannot cause bombardment damage to the deposition surface. A mixture of nitrogen and silane SiH4 also flows into the deposition chamber. In the deposition chamber, the silane and excited oxygen react to form SiO2 regardless of the temperature in the deposition region. A furnace heats the substrate and the gases above it, thereby improving the structural and electrical properties of the silicon dioxide layer to be deposited upon the substrate. The method allows the substrate temperature, during deposition, to be chosen as an independent parameter. Author
- Solid State Physics