A Semi-Insulating InGaAs Epitaxial Layer.
DEPARTMENT OF THE NAVY WASHINGTON DC
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The invention presents a high resistivity, semi-insulating layer of the semiconductor material comprised of InGaAs prepared by liquid phase epitaxial growth upon a lattice-matched semiconducting substrate. To achieve the high resistivity, semi-insulating properties the semiconductor material comprising InGaAs is doped with an element selected from the group consisting of Mn, Cr, Ni, Co, and Fe. A method is described wherein Fe-doped In0.53Ga0.47As is grown by liquid phase epitaxial means upon an InP substrate. The growth procedures involve a proper selection of the amount of dopant to be used, e.g..005 to .005 mole fraction Fe, and the times and temperatures required for bake out of the doped composition of In0.53Ga0.47As. Author
- Miscellaneous Materials
- Solid State Physics