Measurement of Proximity Effects in Electron Beam Lithography.
DEPARTMENT OF THE ARMY WASHINGTON DC
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This document describes a test pattern which is applied to a wafer or mask by electron beam lithography for measuring proximity effects. The pattern comprises two lines which intersect at a small angle, for example 1 degree so that the proximity effects of the two lines combine within the angle to displace the angle vertex by an amount much larger than the proximity effect of an isolated line. A calibration scale is provided to measure this enhanced proximity effect by viewing the pattern with an optical microscope. Author
- Electrical and Electronic Equipment
- Test Facilities, Equipment and Methods
- Printing and Graphic Arts