Accession Number:

ADD010815

Title:

Measurement of Proximity Effects in Electron Beam Lithography.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1984-01-25

Pagination or Media Count:

13.0

Abstract:

This document describes a test pattern which is applied to a wafer or mask by electron beam lithography for measuring proximity effects. The pattern comprises two lines which intersect at a small angle, for example 1 degree so that the proximity effects of the two lines combine within the angle to displace the angle vertex by an amount much larger than the proximity effect of an isolated line. A calibration scale is provided to measure this enhanced proximity effect by viewing the pattern with an optical microscope. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods
  • Printing and Graphic Arts

Distribution Statement:

APPROVED FOR PUBLIC RELEASE