Accession Number:

ADD010795

Title:

Fabrication of Submicron-Wide Lines with Shadow Depositions.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-10-11

Pagination or Media Count:

9.0

Abstract:

A method of fabricating lines of submicron width, comprising the steps of providing a substrate, depositing a first layer of metal upon the substrate spinning a photoresist layer on the metal patterning the photoresist layer etching the metal to undercut the photoresist edge, e.g. with a mixture for approximately ten minutes at room temperature depositing a second layer of metal at an angle 01 to the photoresist edge, thereby defining a long, submicron-wide opening to the underlying substrate depositing a chosen material, for example, metallic or semiconductor, for the bridge onto the substrate at an angle of 02 through the submicron-wide opening and removing undesired material surrounding the bridge by dissolving the photoresist in hot acetone followed by stripping the remaining two layers of metal with etchant. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Test Facilities, Equipment and Methods
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE