Accession Number:

ADD010766

Title:

Method for making Non-Alloyed Heterojunction Ohmic Contacts.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-08-16

Pagination or Media Count:

4.0

Abstract:

Ultra low resistance heterojunction ohmic contacts to semiconductors such as gallium arsenide GaAs is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy MBE. A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a nonalloyed heterojunction ohmic contact having a very low specific resistance. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE