Method for making Non-Alloyed Heterojunction Ohmic Contacts.
DEPARTMENT OF THE NAVY WASHINGTON DC
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Ultra low resistance heterojunction ohmic contacts to semiconductors such as gallium arsenide GaAs is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy MBE. A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a nonalloyed heterojunction ohmic contact having a very low specific resistance. Author
- Electrical and Electronic Equipment