Accession Number:

ADD010615

Title:

Normally Off InP Field Effect Transistor Making Process.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-02-08

Pagination or Media Count:

5.0

Abstract:

A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contacts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE