Fabrication of Gallium Arsenide-Germanium Heteroface Junction Device.
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P conductivity in the gallium arsenide and N conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.
- Solid State Physics