Accession Number:

ADD010575

Title:

Technique of Silicon Epitaxial Refill.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1983-08-23

Pagination or Media Count:

6.0

Abstract:

A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE