Accession Number:

ADD010575

Title:

Technique of Silicon Epitaxial Refill.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

• Yuan,Han-Tzong
• Anderson,Roger N.

Report Date:

1983-08-23

Pagination or Media Count:

6.0

Abstract:

A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

Descriptors:

• *Patents
• *Silicon compounds
• *Epitaxial growth
• *Integrated circuits
• *Fabrication
• Oxides
• Layers
• Etching
• Chlorides
• Substrates
• Surfaces
• Metal oxide semiconductors

Subject Categories:

• Electrical and Electronic Equipment
• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE