Accession Number:
ADD010575
Title:
Technique of Silicon Epitaxial Refill.
Descriptive Note:
Patent,
Corporate Author:
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s):
Report Date:
1983-08-23
Pagination or Media Count:
6.0
Abstract:
A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Crystallography
- Solid State Physics