Technique of Silicon Epitaxial Refill.
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Pagination or Media Count:
A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.
- Electrical and Electronic Equipment
- Solid State Physics