Accession Number:

ADD010568

Title:

Method and Solution for Etching Indium Antimonide.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1983-08-02

Pagination or Media Count:

4.0

Abstract:

A method for delineating defects in the 111 surface of an indium antimonide crystal wafer by treating said surface with a 5 percent solution of iodine in N, N-dimethylacetamide to form triangularly shaped etch pits in the defect area.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE