Accession Number:

ADD010541

Title:

Process for the Deposition of III-V Compounds Using Ultra-Violet Radiation.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1983-08-16

Pagination or Media Count:

24.0

Abstract:

The present invention relates to a process for depositing III-V compounds and their alloys as epitaxial films onto semiconductor substrates that are crystallographically compatible with said films. More particularly, this invention relates to a vapor phase epitaxy technique which uses ultraviolet irradiation to induce photolysis of phosphine to provide for the deposition of thin layers of III-V compounds and their alloys on suitable semiconductor substrates. The resulting epitaxial structures find particular utility in the fabrication of double heterostructure lasers, light emitting diodes and field effect transistors.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE