Process for the Deposition of III-V Compounds Using Ultra-Violet Radiation.
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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The present invention relates to a process for depositing III-V compounds and their alloys as epitaxial films onto semiconductor substrates that are crystallographically compatible with said films. More particularly, this invention relates to a vapor phase epitaxy technique which uses ultraviolet irradiation to induce photolysis of phosphine to provide for the deposition of thin layers of III-V compounds and their alloys on suitable semiconductor substrates. The resulting epitaxial structures find particular utility in the fabrication of double heterostructure lasers, light emitting diodes and field effect transistors.
- Solid State Physics