High-Performance Bipolar Microwave Transistor.
DEPARTMENT OF THE NAVY WASHINGTON DC
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Document describes a high-frequency transistor and method of making same wherein the parasitic capacitance between base and collector is reduced. The collector layer of GaAs Gallium Arsenide is impregnated with boron ions to form an insulative region under the base contact structure thereby reducing the capacitance in this region and leaving only the region underlying the emitter structure as the active transistor region.
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