Accession Number:

ADD010401

Title:

Method of Forming Hyperabrupt Interface in a GaAs Substrate.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-07-05

Pagination or Media Count:

4.0

Abstract:

A method of fabricating improved semiconductor devices, such as FETs, which require or are improved by a hyperabrupt interface between the active channel and the underlying insulating region. A substrate, such as GaAs, is polished and then implanted with light ions, such as protons, to amorphize the crystal structure down to a certain depth determined by the ion-beam accelerating voltage and the ion fluence level. The crystal is damaged but not amorphized below the lowest amorphization depth. The interface between the amorphized and the non-amorphized, but damaged, regions is a relatively narrow region which will become a hyperabrupt junction. The substrate is then implanted with donor ions, such as Si, in accordance with the requirements of the device to be fabricated and under conditions which provide a retrograde donor ion concentration profile with depth. An annealingdonor activating step is now performed at a relatively low temperature 600 degrees C. or less to avoid breaking down the hyperabrupt interface.

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE