Accession Number:

ADD010379

Title:

Silicon Carbide Shapes.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-05-23

Pagination or Media Count:

15.0

Abstract:

Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide, the graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Containers and Packaging

Distribution Statement:

APPROVED FOR PUBLIC RELEASE