Accession Number:

ADD010294

Title:

Gallium Arsenide-Germanium Heteroface Junction Device.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1983-05-24

Pagination or Media Count:

6.0

Abstract:

Doping with one of the Group Ia elements Li, Na or K near the heteroface junction produces P conductivity in the gallium arsenide and N conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the Group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge. Author

Subject Categories:

  • Fabrication Metallurgy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE