Accession Number:

ADD010283

Title:

Method for Growing an Epitaxial Layer of HgCdTe Grown on a CdTe Substrate.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1983-03-15

Pagination or Media Count:

7.0

Abstract:

Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase epitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is SnHgCdTe 3650.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520 C. The layers were grown on 111A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTeHg1-xCdxTe interface has been as small as 0.3 micrometer for the thin CdTe epilayer. The first CdTeHgCdTe heterojunction sensitive to approx. 2.8 micrometer at 77K has been demonstrated.

Subject Categories:

  • Fabrication Metallurgy
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE