High Frequency Ohmic Contact.
DEPARTMENT OF THE NAVY WASHINGTON DC
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In one embodiment, a ring-shaped contact is formed around a high frequency semiconductor component such as a Schottky diode, with the ring contact being made through a ring-shaped window down to the active semiconductor layer which forms part of the Schottky diode. A high conductivity second semiconductor layer is formed in the ring-shaped window adjacent the active semiconductor layer before depositing electrical contact material therein. An electrical contact bridge is formed from the top of the Schottky diode across the surrounding ring-shaped contact. In a preferred construction of this embodiment, the active semiconductor layer is n-type InP disposed on a substrate of semi-insulating InP, the Schottky metalization for the diode is a refractory metal, and the second semiconductor layer is nInP formed by diffusion an n type doping agent into the active semiconductor layer.
- Electrical and Electronic Equipment
- Solid State Physics