Accession Number:

ADD010115

Title:

Method of Making Oxide Passivated Mesa Epitaxial Diodes with Integral Plated Heat Sink.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1983-02-15

Pagination or Media Count:

6.0

Abstract:

The invention describes an oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown SiO2 is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the SiO2 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited.

Subject Categories:

  • Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE