Annealing of Ion-Implanted GaAs and InP Semiconductors.
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method of annealing both N and P-type ion-implanted GaAs as InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide GaAs or indium phosphide InP semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si3N4, SiO2, A1N, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing. Author
- Particle Accelerators
- Solid State Physics