Accession Number:

ADD010062

Title:

Annealing of Ion-Implanted GaAs and InP Semiconductors.

Descriptive Note:

Patent

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1982-11-02

Pagination or Media Count:

6.0

Abstract:

A method of annealing both N and P-type ion-implanted GaAs as InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide GaAs or indium phosphide InP semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si3N4, SiO2, A1N, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing. Author

Subject Categories:

  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE