Accession Number:

ADD010030

Title:

Improved TUNNETT Diode and Method of Making.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1982-10-29

Pagination or Media Count:

17.0

Abstract:

A TUNNETTTunneling Transit Time electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE