Improved TUNNETT Diode and Method of Making.
DEPARTMENT OF THE NAVY WASHINGTON DC
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A TUNNETTTunneling Transit Time electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector. Author
- Electrical and Electronic Equipment
- Solid State Physics