Accession Number:

ADD009921

Title:

A Planar Compound Semiconductor Insulated Gate Field Transistor (IGFET) and a Virtual Self-Aligned Process for Making the Same.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1982-09-29

Pagination or Media Count:

20.0

Abstract:

The present Invention relates, in general, to a novel compound semiconductor insulated gate field effect transistor IGFET and to a novel process for making the device. Indium phosphide InP has received increasing attention as a promising semiconductor material in the field of high frequency microwave devices and high speed logic circuits due to its high electron drift velocity. The electron drift velocity for InP is higher than other conventional semiconductors, i.e., silicon Si and gallium arsenide GaAs. Additionally, the use of semi-insulating InP has been found to result in a 100 times reduction in parasitic capacitance as compared to that of conventional p-type substrates.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE