Accession Number:

ADD009648

Title:

Three-Mirror Active-Passive Semiconductor Laser.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1982-06-07

Pagination or Media Count:

19.0

Abstract:

Disclosed is a gallium arsenide laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. Author

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE