Three-Mirror Active-Passive Semiconductor Laser.
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
Disclosed is a gallium arsenide laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation. Author
- Lasers and Masers