Accession Number:

ADD009642

Title:

VMOS-FET IMPATT Diode Pulse Bias Circuit.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1982-06-01

Pagination or Media Count:

22.0

Abstract:

This invention describes a VMOS-FET, IMPATT diode pulse bias circuit designed to provide a Gallium Arsenide IMPATT diode with a specified operating voltage and current under required conditions to generate an RF pulse. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE