InP:Te Protective Layer for Reducing Substrate Dissociation.
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Pagination or Media Count:
In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellerium to a concentration of about high 10 to the 18th power to low 10 to the 19th power.
- Electrical and Electronic Equipment
- Solid State Physics