Accession Number:

ADD009636

Title:

InP:Te Protective Layer for Reducing Substrate Dissociation.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1982-06-25

Pagination or Media Count:

10.0

Abstract:

In order to prevent the formation of indium droplets upon the surface of an indium phosphide wafer during liquid phase epitaxial growth, a doped protective layer is deposited by LPE upon said substrate before epitaxial growth of additional layers occurs. The doped protective layer is composed of indium phosphide doped with tellerium to a concentration of about high 10 to the 18th power to low 10 to the 19th power.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE