Refractory Passivated Ion-Implanted GaAs Ohmic Contacts.
DEPARTMENT OF THE NAVY WASHINGTON DC
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A method of attaining n regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. 29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10 to the minus 6th power ohmcm squared-range. Author
- Solid State Physics