Accession Number:

ADD009581

Title:

Fabrication of Schottky Barrier Diodes on PbCl2 PbS.5Se.5 Epitaxial Films.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1982-03-17

Pagination or Media Count:

12.0

Abstract:

This abstract discloses a process for preparing an infrared sensitive photodiode comprising the steps of forming by vacuum deposition an epitaxial layer of a semiconductor alloy material to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material which is an alkali halide or an alkaline earth halide forming a layer of a lead halide which is PbC12, PbBr2, PbF2, or mixtures thereof on the epitaxial layer of semiconductor material by exposing the epitaxial layer to vapor of the lead halide in air for at least 6 hours wherein the lead halide vapor is produced by heating the lead halide at a temperature of from about 175 degrees C to about 225 degrees C vacuum depositing Pb metal onto a portion of the epitaxial layer of semiconductor alloy material to form a non-Ohmic Pb metal contact and forming an Ohmic contact on another portion of the epitaxial layer of semiconductor material.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE