Method and Apparatus for Electrically Testing Radiation Susceptibility of MOS Gate Devices.
DEPARTMENT OF THE ARMY WASHINGTON DC
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A method and apparatus are disclosed for testing susceptibility of a gate insulator in MOS and MIS devices to irradiation without use of ionizing radiation. The method consists of simulating the effects of radiation by applying a high magnitude, pulsed electric field to the device under test. An apparatus capable of determining the relationship between voltage applied to the device under test and the device capacitance is used to provide the desired susceptibility information. Author
- Test Facilities, Equipment and Methods
- Solid State Physics