Accession Number:

ADD009381

Title:

Method for Depositing Heteroepitaxially InP on GaAs Semi-Insulating Substrates.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1982-02-09

Pagination or Media Count:

5.0

Abstract:

A method is given for depositing high quality indium phosphide layers heteroepitaxially on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of InyGa1-yAsxP1-x.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE