Microwave-Infrared Detector with Semiconductor Superlattice Region.
DEPARTMENT OF THE ARMY WASHINGTON DC
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This invention concerns a detector andor mixer of electromagnetic energy in the microwave-infrared region of the electromagnetic spectrum and is comprised of a body of semiconductor material having a superlattice region consisting of, for example, InAs - GaSb wherein the thickness of alternating epitaxial planar layers is in the range of 30A to 80A. Incident radiation perpendicular to the planar regions results in an electric field being provided in the plane of the layers which causes a reduction in the superlattice bandwidth and accordingly an increase in the transverse effective mass of the carriers. This results in a decrease in the perpendicular conductivity through the superlattice region. Author
- Infrared Detection and Detectors
- Solid State Physics