Accession Number:

ADD009309

Title:

Thin Film Electroluminescent Device.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1982-01-28

Pagination or Media Count:

10.0

Abstract:

This invention relates to the structure of a thin film electroluminescent device wherein an insulating layer Y2O3 is disposed between a pair of outer active layers of doped semiconductor ZnSMn. Contiguous to one outer layer of ZnSMn is a metal electrode while a transparent electrode is contiguous to the other outer ZnSMn layer. The composite structure, moreover, is formed on and supported by a glass substrate. Electroluminescent phenomenon occurs primarily at the layer interfaces upon the application of an alternating voltage applied across electrodes. Such a structure is more resistant to failure due to the fact that the ZnSMn layers next to the electrodes act as current limiting layers for preventing breakdown and destruction of the metal electrode for a certain applied voltage which would otherwise occur in electroluminescent structures having the active ZnSMn layer sandwiched between two insulating layers.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE