Accession Number:

ADD009208

Title:

Compound Semiconductor Device Performance and Reproducibility Improvement.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1981-10-26

Pagination or Media Count:

12.0

Abstract:

This application discloses a method of treating a compound semiconductor substrate material, such as GaAs, to imporove activation efficiency, reproducibility and reliability. The substrate is subjected to a prebombardment to a shallow depth by ions of an element such as Ar, or Ga, or As, which will not significantly affect the doping concentration of the substrate. Ions from an activator element, or elements, are then used for bombardment so that their peak concentration level occurs at a depth of about 80 of the peak concentration level of the prebombardment ions. This provides a very high activation efficiency and a sharp capacitance-voltage profile.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE