Refractory Oxide-Refractory InP Schottky Barrier.
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
This abstract discloses a Schottky barrier with InP formed by disposing a very thin film 150 A of a refractory metal oxide over an InP layer and then disposing a thin film of a refractory metal over the refractory metal oxide. The resulting Schottky barrier is high greater than 0.65eV with very low leakage current. By way of example, the refractory metal oxide may be TiO2 and the refractory metal TiW.
- Metallurgy and Metallography
- Solid State Physics