Accession Number:

ADD009152

Title:

Ion-Implanted Evaporated Germanium Layers as N+ Contacts to GaAs.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1981-11-03

Pagination or Media Count:

4.0

Abstract:

A method of forming a single, reliable n contact for discrete GaAs devices, A film of p-type Ge is deposited uniformly over the surface of a n-type GaAs substrate. Ions of phophorous or arsenic are implanted to 5 x 10 to the 18th power ionscc at a depth of 1500 A. The ends and the sides of the substrate and Ge layer are capped by a CVD oxide and annealed at 450-500 C. for about one hour. This process over-compensates the initial p-type layers which results in the Ge layer becoming n. The oxide is removed by an etch process and then n Ge is etched to form two separate contact sections of n Ge. The n Ge is then metalized to form ohmic contacts by use of NiAu. A CVD oxide overcoat may again be applied and annealed at about 500 C. to drive a shallow 200-500 A, n germanium diffusion into the substrate. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE