Accession Number:

ADD009090

Title:

Niobium Tunnel Junction and Its Fabrication by Reactive Ion Beam Oxidation.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1981-03-23

Pagination or Media Count:

16.0

Abstract:

A method for growing high quality, ultra thin oxide layers on metal films, suitable for use as tunneling barriers in Josephson Junction devices. The oxides are produced with an argon-oxygen Ar-O ion beam, and the rate of growth is determined by the competition between oxidation and sputtering by the ions. This method results in variable current density submicron niobium Nb -lead Pb alloy Josephson Junctions with critical current density from low values to values exceeding 100,000 ampsq cm and low leakage currents at voltages below the energy gap. An edge geometry has been developed, allowing in-line junctions to be formed on the ion mill-patterned edge of niobium Nb film. Author

Subject Categories:

  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE