Accession Number:

ADD009048

Title:

Planar Doped Barrier Gate Field Effect Transistor.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1981-11-23

Pagination or Media Count:

11.0

Abstract:

Disclosed is an epilayer field effect transitor having a planar doped barrier gate formed on an n-type semiconductor planar channeel region intermittent drain and source terminals formed on the surface of the channel region. The semiconductor channel region is fabricated on a semiconductor substrate, preferably GaAs and being separated therefrom by one or more semiconductor planar buffer regions. The planar doped barrier gate comprises an n - pi - p - pi structure grown by molecular beam epitaxy over the n-type channel region. Application of an electrical potential to the gate modulates the channel charge depletion in the semiconductor channel region underlying the gate causing a variation in the channel conductance laterally between the source and drain terminals. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE