Accession Number:

ADD008783

Title:

Insulated Gate Field-Effect Transistors.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1981-05-19

Pagination or Media Count:

4.0

Abstract:

An improved normally off insulated gate field-effect transistor capable of operation at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are realized by forming n contacts for the n-channel device and p contacts for the p-channel device. Au-Sn will form n contacts while Au-Zn will form p contacts. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE