Insulated Gate Field-Effect Transistors.
DEPARTMENT OF THE NAVY WASHINGTON DC
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An improved normally off insulated gate field-effect transistor capable of operation at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are realized by forming n contacts for the n-channel device and p contacts for the p-channel device. Au-Sn will form n contacts while Au-Zn will form p contacts. Author
- Electrical and Electronic Equipment
- Solid State Physics