Accession Number:

ADD008732

Title:

Quadrant Avalanche Photodiode.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1981-07-13

Pagination or Media Count:

13.0

Abstract:

This document describes a quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants. Semiinsulating material prevents cross-talk between quadrants. The Schottky barrier quadrant detectors were fabricated using GaAs1-x Sbx ternary alloys grown epitaxially on heavily doped GaAs substrates.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE