Accession Number:

ADD008693

Title:

Method of Liquid Phase Epitaxial Growth.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1981-04-21

Pagination or Media Count:

4.0

Abstract:

This patent discloses an improved method of liquid phase epitaxial growth of III-V compound on an InP substrate by growing the epitaxial layer in an atmosphere of H2 with .00001 to .0001 mole fraction PH3.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE