Accession Number:

ADD008597

Title:

Method for Controlling Impurities in Liquid Phase Epitaxial Growth.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1981-03-06

Pagination or Media Count:

15.0

Abstract:

In a process for growth of a layer of semiconductor material by precipitation from a solution of the semiconductor material in a solvent by liquid phase epitaxial growth LPE, the improvement is the step of adding from approximately 0.01 to 1.0 by weight of a material which forms a stable oxide or sulfide and is soluble in the solvent to the solution prior to the step of precipitating the semiconductor layer to eliminate the deleterious effects of residual oxygen. A relatively short annealing time is required to dissolve the addition in the solvent and allow the addition to react with dissolved oxygen or other impurities before a conventional LPE growth process may be initiated, although high temperature anneals of varying length may precede or follow the addition of the oxide-forming or sulfide-forming material. Zirconium, titanium, vanadium, scandium, yttrium, and aluminum are in general suitable for use as the oxide-forming material. Author

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE