Improved Field-Effect Transistor.
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention discloses a method for improving field-effect transistors. Wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor FET may be selectively raised. Impurity ions are implanted in the source-gate channel region followed by a much shallower implant of boron in the same region. The boron ion concentration should exceed the N impurity ion concentration by a factor of 2 or more.
- Electrical and Electronic Equipment
- Solid State Physics