Accession Number:

ADD008413

Title:

Improved Field-Effect Transistor.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1980-09-16

Pagination or Media Count:

8.0

Abstract:

This invention discloses a method for improving field-effect transistors. Wherein the resistivity of the upper layer of the source-gate channel region of a GaAs field-effect transistor FET may be selectively raised. Impurity ions are implanted in the source-gate channel region followed by a much shallower implant of boron in the same region. The boron ion concentration should exceed the N impurity ion concentration by a factor of 2 or more.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE