Accession Number:

ADD008292

Title:

Formation of Metal Nitride Oxide Semiconductor (MNOS) by Ion Implantation of Oxygen through a Silicon Nitride Layer.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Report Date:

1978-08-08

Pagination or Media Count:

3.0

Abstract:

A layer of silicon nitride Si3N4 is deposited on a silicon substrate. A mask provided with windows representing device structures is then formed over the silicon nitride layer. Oxygen is then implanted through the window portion of the silicon nitride layer into the Si3N4Si interface region to form a tunneling insulator interface layer of silicon dioxide SiO2. The final structure is heat treated and then has the form SiN4SiO2Si. It can be made into a metal nitride oxide semiconductor MNOS field effect transistor device by conventional diffusion, ion implant and metallization processes. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE