Tungsten-Titanium-Chromium/-Gold Semiconductor Metallization.
DEPARTMENT OF THE NAVY WASHINGTON DC
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Improved TRAPATT diodes in which the improvement comprises a high-temperature metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped mesa or ring structure TRAPATT diodes. Such diodes can withstand 610 deg C for one hour without degradation. author
- Fabrication Metallurgy
- Solid State Physics