Accession Number:

ADD008034

Title:

Tungsten-Titanium-Chromium/-Gold Semiconductor Metallization.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1980-10-28

Pagination or Media Count:

4.0

Abstract:

Improved TRAPATT diodes in which the improvement comprises a high-temperature metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped mesa or ring structure TRAPATT diodes. Such diodes can withstand 610 deg C for one hour without degradation. author

Subject Categories:

  • Fabrication Metallurgy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE