Accession Number:

ADD007987

Title:

Method for Epitaxial Growth of GaAs Films and Devices Configuration Independent of GaAs Substrate Utilizing Molecular Beam Epitaxy and Substrate Removal Techniques.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1980-10-07

Pagination or Media Count:

6.0

Abstract:

A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate is disclosed. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n layer is grown on the n-type active material. Subsequent to growth of the semi-insulating layer, a thin cap of germanium is deposited on the composite. Gold is deposited onto the germanium cap to form an eutectic-alloy layer with the germanium. The alloy is formed and the composite is bonded to a metal, glass, or ceramic substrate and the semiconductorgermanium is removed by etching and the n-layer is finally etched to provide a clean-up and to tailor the layer to a desired thickness. Subsequent steps are employed to form desired structures such as field-effect transistors or Schottky-barrier devices. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE