Accession Number:

ADD007962

Title:

Tunnel Diode.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1980-04-15

Pagination or Media Count:

4.0

Abstract:

A tunnel diode is disclosed which includes a heterostructure consisting of a first layer of GaSb1-yAsy and a second layer of In1-xGaxAs. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel diode of the instant invention. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE