Low Temperature CMOS/SOS Process Using Dry Pressure Oxidation.
DEPARTMENT OF THE ARMY WASHINGTON DC
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An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor CMOSsilicon on sapphire SOS structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800 C to 825 C using ion implantation for all doping operations and plasma definition of all masking dielectrics. Author
- Physical Chemistry
- Plasma Physics and Magnetohydrodynamics
- Solid State Physics