Accession Number:

ADD007735

Title:

Low Temperature CMOS/SOS Process Using Dry Pressure Oxidation.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1979-12-25

Pagination or Media Count:

4.0

Abstract:

An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor CMOSsilicon on sapphire SOS structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800 C to 825 C using ion implantation for all doping operations and plasma definition of all masking dielectrics. Author

Subject Categories:

  • Physical Chemistry
  • Plasma Physics and Magnetohydrodynamics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE